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PD- 91899B
SMPS MOSFET
IRF3515S IRF3515L
HEXFET(R) Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching
l
VDSS
150V
RDS(on) max
0.045
ID
41A
Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001)
l
D2 Pak IRF3515S
TO-262 IRF3515L
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
41 29 164 200 1.3 30 4.3 -55 to + 175 300 (1.6mm from case )
Units
A W W/C V V/ns C
Applicable Off Line SMPS Topologies
l
Telcom 48V input DC/DC Active Clamp Reset Forward Converter
Notes
through
are on page 10
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1
10/28/99
IRF3515S/L
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. 150 --- --- 3.0 --- --- --- ---
Typ. --- 0.21 --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.045 VGS = 10V, ID = 25A 4.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 15 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 17 120 34 63 2260 530 170 3330 230 280 Max. Units Conditions --- S VDS = 50V, ID = 25A 107 ID = 25A 23 nC VDS = 120V 65 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 25A ns --- RG = 2.5 --- RD = 3.0,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
670 25 20
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
--- ---
Max.
0.75 40
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 41 --- --- showing the A G integral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF3515S/L
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
1
5.0V
20s PULSE WIDTH TJ = 175 C
1 10 100
5.0V
0.1 0.1 1
20s PULSE WIDTH TJ = 25 C
10 100
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
ID = 41A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
100
2.0
TJ = 175 C
1.5
10
1.0
TJ = 25 C
V DS = 50V 20s PULSE WIDTH 4 6 8 10 12 14
0.5
1
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF3515S/L
100000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 25A VDS = 120V VDS = 75V VDS = 30V
VGS , Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
10000
12
Ciss
1000
8
Coss Crss
100 1 10 100
4
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
I D , Drain Current (A)
100
TJ = 175 C
100
10us
10
100us
TJ = 25 C
1
10
1ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF3515S/L
50
VDS VGS
RD
40
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
30
10V
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
(Z thJC)
0.20 0.1 0.10 0.05
Thermal Response
0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t
2
0.01
J = P DM x Z thJC
+T C 1
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3515S/L
1 5V
1600
EAS , Single Pulse Avalanche Energy (mJ)
TOP BOTTOM
VDS
L
D R IV E R
ID 10A 17A 25A
1200
RG
20V tp
D .U .T
IA S
+ V - DD
A
800
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
400
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
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IRF3515S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETS
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7
IRF3515S/L
D2Pak Package Outline
1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2
4 .6 9 (.18 5) 4 .2 0 (.16 5)
-B1.3 2 (.05 2) 1.2 2 (.04 8)
10 .1 6 (.4 00 ) R E F.
6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM
0.55 (.0 22) 0.46 (.0 18)
M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E
8 .89 (.35 0) 17 .78 (.70 0)
3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
8
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IRF3515S/L
TO-262 Package Outline
TO-262 Part Marking Information
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9
IRF3515S/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.16 1 ) 3.9 0 (.15 3 )
1 .6 0 (.06 3) 1 .5 0 (.05 9) 0 .3 68 (.0 14 5) 0 .3 42 (.0 13 5)
F EE D D IRE C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1.60 (.45 7) 1 1.40 (.44 9)
1 5.42 (.6 09) 1 5.22 (.6 01)
24.30 (.95 7) 23.90 (.94 1)
TR L
10.90 (.42 9) 10.70 (.42 1) 1 .7 5 (.069 ) 1 .2 5 (.049 ) 1 6.10 (.6 34 ) 1 5.90 (.6 26 ) 4.7 2 (.13 6) 4.5 2 (.17 8)
F E ED D IRE C T IO N
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941) 4
330.00 (14.173) M AX.
60.00 (2.362) M IN.
NO TES : 1. CO MF OR MS TO EIA-418. 2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER . 3. DIM ENS ION M EASUR ED @ HU B. 4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E.
30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961)
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 2.2mH
RG = 25, IAS = 25A. (See Figure 12)
TJ 175C * When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 5.0A, di/dt 330A/s, VDD V(BR)DSS,
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 10/99
10
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